Abstract
The carrier trapping properties in MOS transistors fabricated on silicon on insulator substrates synthesized by deep oxygen implantation (SIMOX) are investigated by photo-induced current transient spectroscopy. The adaptation of the PICTS method to depletion-mode MOS transistors is described. The upper and lower half band gap are probed by using N-channel and P-channel transistors integrated on the same chip. The density of states at the buried Si-SiO2 interface is in the region of 1012 cm-2 eV-1. A localized level of electron traps, presumably associated with dislocations, is detected at 0.29 eV below the conduction band.
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