Abstract
Many of the proposed high permittivity gate dielectrics for silicon-based microelectronics rely on a stack configuration, with an SiO2 buffer layer to provide an interface. We describe a means for creating gate dielectrics with a direct yttrium silicate–silicon interface through the solid-state reaction of yttria and silicon oxynitride, avoiding the preparation of an oxide-free silicon surface. Characterization by medium-energy ion scattering indicates complete consumption of the underlying oxide through silicate formation during high-temperature annealing. Furthermore, the silicate dielectric exhibits small flat-band voltage shifts, indicating low quantities of charge, without passivation steps. Creation of a silicate–silicon interfaces by a simple route may enable the study of an alternate class of dielectrics.
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