Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods

Abstract

We fabricated a Ge-on-insulator (GOI) structure by the Ge condensation method and characterized the SiGe layer during the condensation process by X-ray reciprocal space mapping and synchrotron microbeam X-ray diffraction. The crystalline quality of the SiGe layer degraded during the initial 1 h of oxidation at 1050 °C and it also rapidly degraded during 1 h of oxidation at 900 °C immediately before the formation of GOI structures. The slight degradation was caused by annealing in Ar, indicating that the degradation during the initial 1-h condensation is accelerated by Ge atoms being ejected from the oxidized interface.