Extended Defects in Ge-condensed SGOI Structures Fabricated by Using Proton and Helium Implantations

Abstract

The SGOI structures using Ge condensation method have been fabricated by rapid thermal chemical vapor deposition using H+ and He+ ion-implantations, and deep level defects investigated using the deep level transient spectroscopy (DLTS). According to DLTS measurement, a deep level defect induced during Ge condensation process was found at 0.28 eV above the valence band with capture cross sections of 2.67x1017 cm-2, and two extended deep levels at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17x1014 cm-2, 0.96x1015 cm-2, respectively. Of ion-implanted samples, the densities of the newly generated defect as well as the existing defects were decreased effectively. And, Coulomb barrier height of the extended defect was drastically reduced. Thus, we suggest that the Ge condensation method using the H+ ion implantation could reduce deep level defects generated from the Ge condensation and control electrical properties of condensed SiGe layers.