Abstract
X-ray double- and triple-crystal diffractormetry was used to measure the rocking curves of typical SiGe heterobipolar transistor structures. The depth profile of the Ge content can be determined by simulation of the rocking curves with an accuracy of about 1 nm for the thickness of the Si-cap layer and the total thickness of the SiGe layer, and an absolute error in the maximum Ge content of less than 0.5%. Comparison of experimental and simulated curves allows a fast qualitative assessment of the structural perfection of the layer system. It is doubtful that profile of boron doping inside the SiGe layer can be characterized by X-ray diffraction methods.
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