Abstract
Optical emission spectroscopy, quadrupole mass spectrometry, and microwave phase measurements of electron density were used to study the characteristics of plasmas and their resulting etch processes. The addition of to plasmas enhanced the etch rate of GaAs from 1000 Å/min in pure to 2300 Å/min in a 40:60 mixture (15 mTorr, 10 sccm). The optical emission intensities of atomic and molecular chlorine remained nearly constant with increasing percentage (up to 20% but an argon actinometer exhibited a large increase in optical emission intensity with addition, indicating a shift in the electron density distribution function. Electron density measurements showed negligible difference between the average electron densities of pure and 60% in plasmas except at high power. Mass spectrometric results showed an increase in dissociation and a subsequent increase in production with the addition of nitrogen, accounting for the increase in etch rate. The enhanced dissociation is believed to be due in part to an increase in the average electron temperature. © 2005 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
