Abstract
Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N/sub 2/ has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050/spl deg/C, 60 s RTA. By varying implantation and postimplantation annealing conditions, we could convert carrier concentration from p-type 3 /spl times/ 10/sup 17/ cm/sup -3/ into n-type 2 /spl times/ 10/sup 17/ cm/sup -3/ /spl sim/2 /spl times/ 10/sup 19/ cm/sup -3/. It was found that typical activation energies of Si implants in p-GaN are lower than 10 meV. Such activation energies are smaller than those observed from epitaxially grown Si-doped GaN films. A deep donor level with activation energy of 60 meV was also found from some samples. Photoluminescence studies show that the peak appears at 372 nm might be related to implantation-induced defects. It was also found that a green emission band could be observed from Si-implanted GaN. It was shown that such a green emission is related to the yellow band observed from epitaxially grown Si-doped GaN. The transport properties of these Si-implanted samples were also studied.
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