Abstract
Thermal-wave measurement was used to characterize Si +-implanted 3 in. diameter, semi-insulating GaAs wafers just after implantation. The results indicated that the distribution map of thermal-wave signals on a GaAs wafer agreed well with that of the peak carrier concentration of the carrier profile obtained from capacitance-voltage ( C– V) measurements. On the basis of a linear relation between the thermal-wave signal and the implantation dosage, this method is shown to be a very effective tool in the threshold voltage monitoring of GaAs metal-semiconductor field effect transistors with a thin implanted channel layer which cannot be characterized by conventional C– V measurement.
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