Abstract
Thermal-wave measurements have been carried out for characterizing refractory W, WNx, and WSix films on GaAs substrates. Thermal-wave signals from these films were measured as a function of annealing temperature up to 900 °C, together with four-point probe measurements and x-ray diffraction analysis. The thermal-wave signals indicated a good linear relation to electrical resistivity, as shown in the cases of W and WNx films formed by sputtering deposition. This relation was associated with the grain formation and growth of W and W2 N microcrystals as the annealing temperature increased. It was found that the thermal-wave measurement was a very sensitive method for detecting phase transformation and degradation at the metal-GaAs interface, which were shown in the case of WSix films formed by low-pressure chemical vapor deposition.
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