Abstract
Ge x Si 1−x are characterized by Raman microspectroscopy. The strain of the 17.5-nm-thick Si layer was examined through deep UV Raman measurements. The depth profile of the GexSi1−x alloy composition and crystallinity was determined by visible Raman image measurement of the sample cross section. These measurements give results consistent with transmission electron microscopy and secondary ion mass spectrometry analyses.
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