Abstract
We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic (). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.
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