Abstract
Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion.
Highlights
Mobility degradation phenomena and parasitic source-and-drain series resistance are two parameters of special importance for MOSFET characterization
In this paper we present an iterative method based on exponential model of mobility and analytical approach using least squares method
In order to validate the presented method, the MOSFET transistor measured in this work has the following parameters: channel width W = 4μm, gate oxide thickness tox = 5nm, channel length L = 0.1μm, and channel doping Na = 1016 cm-3
Summary
Mobility degradation phenomena and parasitic source-and-drain series resistance are two parameters of special importance for MOSFET characterization. These two parameters limit scaling of advanced devices and produce effects on the device’s transfer drain current-gate voltage characteristics. Several methods and procedures have been proposed to extract the series resistance and the mobility degradation parameters [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15]. In works [21], a review of DC extraction methods for MOSFET parasitic series resistance and mobility degradation model parameters has been presented. Extraction method The procedure is based on calculating the function R(Vg) :
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
