Characterization of semiconductor materials and devices by surface analysis techniques

Abstract

In this review we consider some major surface analysis techniques: Rutherford backscattering (RBS); Auger electron spectroscopy (AES); X-ray photoelectron spectroscopy (XPS); ion scattering spectrometry (ISS) and secondary ion mass spectrometry (SIMS). Combined with ion bombardment for in-depth profiling some of these techniques provide three-dimensional composition distributions in a thin film. New instrumental developments are smaller electron and ion beam sizes and the increased use of position sensitive detectors. Spatial resolution and quantitative aspects are discussed; examples used are taken from semiconductor materials and device work.