Abstract
Abstract Amnesia-resistive chaotic circuits have various application prospects due to their unique circuit characteristics. In this paper, by studying the relationship between memristors and chaotic circuits, two models of magneto-controlled memristors with smooth quadratic monotonic rise nonlinear characteristics are constructed based on Tsai’s circuit, and an active memristor circuit composed of negative conductance is combined to replace Tsai’s diode in Tsai’s circuit system, and then a magneto-controlled memristor is inserted between the LC resonant part of the circuit, thus establishing a heterogeneous memristor second-order chaotic circuit. Multisim is used for device modeling, circuit construction, and system composition and simulation. The simulation tests show that when t ∈ [0,900] ∪ [1800,2500], the system exhibits a chaotic state. When t ∈ (900,1800), the system exhibits a periodic state. As the initial value parameter d varies between [2,4.64], the state of the system shifts between chaotic and hyperchaotic states, while the complexity of the system changes back and forth. This study demonstrates that the heterogeneous magneto-controlled memristor chaotic circuit has a rich, chaotic behavior, providing an effective reference for applying chaotic memristor circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
