Abstract
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
