Abstract
In this work, we study the resistive switching characteristics of two different resistive switching memory devices (SiN x and HfO x ) with SiO 2 tunnel barrier. The switching of the former and the latter is based on the movement of hydrogen ion and oxygen vacancies, respectively. For Cu/SiN x /SiO 2 /p+-Si device, the operating current is drastically reduced and nonlinearity of LRS is increased compared to without the devices without tunnel barrier. These experiment results demonstrate that the two-types RRAM devices having tunnel barrier is highly suitable for the low-power and high-density memory applications.
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