Characterization of residual strain in SiC films deposited using 1,3-disilabutane for MEMS application

Abstract

The residual strain of amorphous and polycrystalline SiC films deposited using a single precursor 1,3-disilabutane is characterized as a function of deposition temperature ranging from 700 to 850°C. SiC microstrain gauges and cantilever beam arrays fabricated by micromachining are employed to characterize directly the average residual strain and strain gradient. The residual strain of SiC films changes from compressive to tensile as the deposition temperature increases. The strain gradient is also found to depend on the deposition temperature, and can be adjusted between positive and negative values to fabricate flat, curling-up, and curling-down micromechanical structures.