Abstract
Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs∕InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that KPFM is capable of detecting quantum wells as narrow as 5nm. Evidence for carrier accumulation in the quantum wells is observed. A complete quantitative analysis of the quantum well properties is shown to be impeded by tip averaging effects and due to surface/interface states.
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