Abstract
The effects of adding Al or In to GaAs on precipitates and their distribution in anodic oxides were studied using laser Raman spectroscopy. Crystalline As precipitated from Ga1-xAlxAs (0 ≤x ≤0.54) and Ga1-xInxAs (0 ≤x ≤0.15), while no species precipitated from Ga1-xInxAs (0.53 ≤x ≤1) after annealing in a nitrogen atmosphere at a temperature higher than 430°C. On the other hand, amorphous species precipitated from Ga1-xInxAs (0 ≤x ≤1) and no species precipitated from Ga1-xAlxAs (0.22 ≤x ≤0.54) after annealing in a hydrogen atmosphere at a temperature higher than 400°C. The crystalline As is produced by a solid-state interfacial reaction at the oxide/semiconductor interface, while the amorphous species is produced by the reduction of oxides.
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