Characterization of passive CMOS strip sensors

Abstract

Recent advances in CMOS imaging sensor technology, e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.