Abstract
Future particle accelerator experiments, for example the High Luminosity-LHC (HL-LHC) in 2025, will demand a much higher radiation hardness of silicon strip sensors due to high fluences and long operation times. New p-type strip sensors have been developed and their charge collection behavior as well as their electrical performance have been investigated. Additionally the long-term behavior under operation has to be investigated and understood. In previous studies of the annealing behavior, the phenomenon of charge multiplication appeared in highly irradiated and/or long-term annealed sensors. This phenomenon is now thoroughly investigated within this study for ATLAS12 strip sensors irradiated to fluences ranging from 5⋅1014neq∕cm2 to 2⋅1015neq∕cm2. Therefore systematic charge collection, leakage current and electric field measurements have been carried out at several annealing temperatures between 23°C and 80°C to investigate the dependence on temperature and fluence. The stability, temperature effects and the maximum amount of multiplication reachable were investigated. Severe changes in the signal pulses in time were observed with increasing amount of annealing. The pulse duration started to increase for enhanced charge multiplication, exceeding the readout shaping time of the ALIBAVA system.
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