Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect

Abstract

The new approach to the characterization of semiconductor interfacial properties by the quantum Hall effect (QHE) and the scanning near field optical microscopy (SNOM) is demonstrated to the heterointerfaces of partially ordered GaInP/GaAs grown by low-pressure Metal Organic Vapor Phase Epitaxy. The Shubnikov de-Haas (SdH) oscillations and the Hall plateaus are observed in the heterointerfaces of both the less-ordered and more-ordered GaInP/GaAs samples with a large clover-shape, but these samples exhibit both 2D and 3D electron behaviors. In contrast to large clover-shaped samples, the distinct SdH oscillations and the Hall plateaus in the less-ordered sample, while the single SdH oscillation and the corresponding large plateau in the more-ordered small Hall-bar sample are observed. These results suggest that there may be many domains, each having a different carrier density and sizes in the less-ordered sample, while one or few large domains with uniform carrier concentration and sizes in the more-ordered sample. In SNOM measurements, PL intensity varies in the mapping of the more-ordered sample and it is concluded that the variation of the PL intensity may result from an inhomogeneous distribution of non-radiative recombination centers in the more-ordered sample.