Abstract
p–n junctions were fabricated in diamond and cubic BN for ultraviolet light emittingdiodes. These junctions were characterized by means of cathodoluminescence (CL) andelectron-beam-induced current (EBIC). The line profile of CL spectra clearly revealed thedifferent doping regions. EBIC profiles showed the band profile of these structures. Thecomparison of CL and EBIC results confirmed that, in both cases, the electrical fields existat the interfaces between p and n regions. The light emitted from these structuresunder the current injection was compared with CL spectra from the p and nregions. It is noted that EBIC and CL are a suitable tool for the characterization ofp–n junction devices of wide-gap materials with small minority carrier diffusionlength.
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