Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling

Abstract

Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and 18O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).