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https://doi.org/10.1016/1350-4495(95)00077-1
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Cite Journal: Infrared Physics and Technology |  Publication Date: Jun 1, 1996 |
 Citations: 2 |
Measurements of thermal emission power of silicon in the spectral band at λ = 9.05 μm are used for determination of the interstitial oxygen concentration and its distribution in silicon wafers. The calibration curves for the wafers with fixed thickness are shown. A comparison to the traditional absorption method is given.
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