Abstract
The dielectric function spectra of low dielectric constant (low-k) materials have been determined using high-precision four-zone null spectroscopic ellipsometry, near-normal incidence reflection spectrometry and Fourier transform infrared transmission spectroscopy. The optical functions over a wide spectral range from 0.03 to 5.4 eV (230 nm to 40.5 microm wavelength region) have been evaluated for representative low-k materials used in the semiconductor industry for interlayer dielectrics: (1) FLARE -- organic spin-on polymer, and (2) HOSP -- spin-on hybrid organic-siloxane polymer from the Honeywell Electronic Materials Company.
Highlights
Ultralarge scale integration (ULSI) of recent semiconductor high performance integrated circuits requires modern materials for interlayer and intermetal dielectrics
The optical functions over a wide spectral range from 0.03 to 5.4 eV (230 nm to 40.5 μm wavelength region) have been evaluated for representative low-k materials used in the semiconductor industry for interlayer dielectrics: (1) FLARE – organic spin-on polymer, and (2) HOSP – spin-on hybrid organic-siloxane polymer from the Honeywell Electronic Materials Company
In our previous paper [9], the optical functions of SiLK and Nanoglass were obtained in the spectral range from 0.5 to 5.4 eV using a simultaneous treatment of ellipsometric and reflectivity data
Summary
Ultralarge scale integration (ULSI) of recent semiconductor high performance integrated circuits requires modern materials for interlayer and intermetal dielectrics. In our previous paper [9], the optical functions of SiLK (semiconductor dielectric resin from the Dow Chemical Company) and Nanoglass (nanoporous silica from the Honeywell Electronic Materials Company) were obtained in the spectral range from 0.5 to 5.4 eV using a simultaneous treatment of ellipsometric and reflectivity data. The second material, HOSP from Honeywell Advanced Microelectronic Materials, is a spin-on hybrid siloxane-organic polymer with a dielectric constant of 2.5 and thermal stability of up to 550◦C. Both materials are compatible with both multi-level copper damascene structures and traditional aluminum/tungsten interconnect technologies.
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