Abstract
Plasma immersion ion implantation (PIII) exploits the basic advantages of ion implantation using the simplest equipment, direct extraction of ions from a plasma and implantation into a surface. In the present study comparative investigations were performed using high-depth-resolution Rutherford backscattering, cross-sectional transmission electron microscopy and spectroscopic ellipsometry to analyze the composition of the topmost layer and to investigate structural modification caused by PIII in single crystalline silicon.
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