Abstract
The midgap interface state density of the Al2O3/In0.19Al0.81N interface formed by atomic layer deposition was investigated by photoassisted capacitance–voltage (C–V) measurement. The interface-state density was derived to be in the range of 1012 eV−1 cm−2 around the midgap. The hysteresis of the C–V curve increased as the irradiated photon energy increased beyond the threshold value of 1.8 eV. This threshold energy value coincided with the energy difference between the conduction band edge and the charge neutrality level ECNL for In0.19Al0.81N, which indicated the density of interface states at around ECNL to be below the detection limit.
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