Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Abstract

Metal–ferroelectric–metal–insulator–semiconductor (MFMIS) capacitors using Al-doped HfO2 (Al:HfO2) ferroelectrics were proposed and the effects of O3 doses were investigated. The memory window (MW) increased with increasing the areal ratios of the MIS to the MFM (SI/SF) and the largest MW was obtained at the largest SI/SF for both devices prepared with O3 doses of 3 and 5 s. Contrarily, the retention of the device prepared with O3 dose of 3 s could be improved compared with the device prepared with longer O3 doses. Thus, the SI/SF and O3 doses could be suggested as critical control parameters for the Al:HfO2 MFMIS capacitors.