Abstract
Raman and X-ray topographic measurements were carried out on epitaxial films of silicon carbide grown at Cree Research Inc. by vapor-phase epitaxy on bulk 6H-SiC substrates. The objective was to identify ranges of the Raman spectrum of 6H-SiC that were particularly sensitive to macrostructural defects (dislocations, inclusions, etc.) in these films, and to determine what conclusions could be drawn about the properties of the corresponding portions of the films.
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