Abstract
Structural properties of CdTe and Hg 1 − x Cd x Te epitaxial layers have been investigated by X-ray topography, high resolution X-ray diffractometry and Rutherford backscattering spectrometry. CdTe 5–10 μm thick layers were grown on commercial sapphire (0001) substrates by metalorganic vapour phase epitaxy (MOVPE) at 340°C for 1–3.5 h using dimethyl-cadmium and diisopropyl-tellurium as precursors. Hg 1 − x Cd x Te 15–30 μm thick layers with an uniform composition x = 0.2 or 0.3 were obtained at 530–550°C for 70–120 h by vapour phase epitaxy (VPE) of HgTe on CdTe MOVPE layers which was followed by interdiffusion of Hg and Cd. Despite the strain originated by a big lattice mismatch at the layer/substrate interface, it was shown that the combination of X-ray and RBS/channelling characterization techniques provides the information on crystalline quality, composition and orientation throughout the thickness and area of the CdTe MOVPE and Hg 1 − x Cd x Te VPE layers. Our results are useful for the future progress in selective area epitaxy of CdTe and Hg 1 − x Cd x Te.
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