Abstract
Larger-single-Lorentzian noise that deviates significantly from a 1/f characteristic generated by MOSFET is quantitatively analyzed using a unique evaluation method, which integrates power spectral density over a predetermined frequency band. As a result, the appearance of larger-single-Lorentzian noise is stochastically present and for low gate voltage. According to drain voltage dependence, it is suggested that the origin of larger-single-Lorentzian noise is in a pinch-off region and results from border traps in a gate oxide film by which hot carriers are trapped/de-trapped.
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