Abstract
A modified C( V) measurement technique was developed which uses a feedback circuit to maintain the measured capacitance of the system electrolyte/ion-sensitive layer/insulator/semiconductor (EIIS) at a constant capacitance value (CONCAP method). This method allows the investigation of sensitive layer systems without their preparation on the complex structure of the final FET itself. Depending on the conductivity of the electrolyte and the thickness of the membrane, a resolution better than 1 mV of the ion concentration dependent bias voltage can be achieved. Examples of pH-sensitive layers with tantalum pentoxide and Ca 2+-sensitive inorganic membranes show that the characteristic data are the same for the EIIS structure and the final ion-sensitive field-effect transistor.
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