Characterization of ion-implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F t≳100 GHz

Abstract

This work presents millimeter wave performance achieved by ion-implanted InGaAs/GaAs metal semiconductor field-effect transistor devices. A current gain cutoff frequency ft of 126 GHz and maximum frequency of oscillation fmax of 232 GHz have been measured for 0.20 μm gate length devices. The ft and low-field Hall mobility data, measured at 300 and 112 K, lead us to conclude that the average electron velocity under the gate is mainly due to the high-field velocity rather than low-field electron mobility.