Abstract
Ion beam mixing of thin Ti films deposited on Si is investigated and its effect during subsequent thermal sintering determined. Both inert (Xe +) and dopant (As +) ions are used to intermix the metal films and Si substrate. The morphology of the suicide layer formed by this process and the structure of the silicide/Si interface is shown to be independent of the specific ions used for mixing. The structural differences observed are correlated to the electrical resistivity of the films. Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) including ion channeling are used to characterize the films.
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