Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopy

Abstract

Laser induced absorption and photoluminescence are used for the investigation of band states and deep levels (DLs) in ZnSe and ZnO bulk crystals. Interband two-photon and two-step absorption processes, both via DLs as intermediate (virtual and real, correspondingly) states, take place and give information about the main parameters of the DLs. The effects are investigated depending on doping and thermal treatment which change the contamination of native defects. The results illustrate the great possibilities of nonlinear spectroscopy methods in condenced matter science and especially in local defect study.