Abstract
In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al 2 O 3 and HfO 2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the Q BD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2 O 3 and MOCVD-HfO 2 IPD possess great potential for next generation stacked-gate flash memories.
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