Abstract
In this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HfO 2 ) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO 2 IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO 2 can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO 2 IPD is suitable for mass production applications in the future stacked-gate flash memory technology.
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