Abstract
InGaAs/InP short-period superlattices (SPSLs) grown by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) on (001)InP substrates were investigated by x-ray diffraction (XRD) and Raman scattering. XRD and Raman scattering results show that, although the average lattice mismatch relative to the InP substrate in GSMBE-grown SPSL is close to zero, there may be some lattice parameter relaxation and substrate-layer tilting caused by asymmetrical ordering of atomic layers and/or interchange between As and P atoms at interfaces. In GSMEE-grown SPSLs, layer-by-layer growth is achieved and strained interface layers are formed.
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