Abstract
Abstract The effect of an interfacial layer of silicon on the apparent carrier concentration and mobility of InP grown by low-pressure MOCVD is determined. The presence of silicon contamination at the interface between the substrate and epitaxial layer leads to two-layer conduction in the sample, where the carrier concentration and mobility values for these two layers can be determined by fitting the magnetic field dependence of the apparent carrier concentration and mobility. The average carrier concentration and mobility of the epitaxial InP are 2.2 ± 0.8 × 1014cm−3 and 130 ± 20 × 103cm2/V s, respectively, which shows that the InP grown is of consistently high quality. The carrier concentration results are confirmed by low-temperature photoluminescence analysis, and an extrapolation of standard Hall carrier concentration data to zero interfacial contamination. The interfacial silicon is only partially active, and probably consists of incorporated active Si and inactive SiOx species. The source of Si contamination identified in this work is a defective oxidation apparatus, but a variety of potential contamination sources exist.
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