Abstract
The interfacial microstructure of cubic boron nitride (c-BN) film deposited on single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscopy were used for compositional and microstructure analysis. c-BN film was etched at size 4×4mm2 by argon ion in XPS equipment to obtain depth concentration profile of the BN film and B1s XPS spectra at different etching depth. FTIR was alternately used to determine the microstructure of the BN film at different etching depth. The results show that a thin layer of hexagonal boron nitride (h-BN) phase exists at the interface between c-BN layer and substrate. In addition, transmission electron microscopy and selected area electron diffraction further confirm above the conclusion.
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