Abstract
Using contactless capacitance-voltage (C-V), photoluminescence surface state spectroscopy ( PLS3) and X-ray photoelectron spectroscopy techniques, interface electronic properties of ultrathin-insulator films formed on Si (111) surfaces at low temperatures were characterized, paying particular attention to the effect of nitrogen-related plasmas. Hydrogen termination was used as the initial surface treatment. Low-temperature (400° C) thermal oxidation processes produced oxide/Si interfaces with a high-density of interface states that caused limited C-V variation and low PL efficiency. Treatment of low-temperature thermally grown oxides in electron cyclotron resonance (ECR) N2 plasma had no effect on the interface properties. On the other hand, marked enhancement of C-V variation and PL efficiency was achieved at the surface after ECR N2O-plasma oxynitridation at 400° C. The correlation between chemical and electronic properties of the interfaces is discussed.
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