Abstract
We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.