Abstract
Undoped InP single crystals were grown by liquid-encapsulated Czochralski method (LEC) using glassy carbon, silica and PBN crucibles. The samples were characterized by Hall and resistivity measurements, photoluminescence at 2 K and glow discharge mass spectroscopy. The residual impurity concentrations for InP grown using glassy carbon or silica crucible are of the same order of magnitude but both higher than that for InP grown with PBN crucibles. All samples exhibit good optical quality. The main acceptor impurities detected in all samples were C and Zn, while the main donors were S and Si. The InP grown from the glassy carbon crucible has the lowest C concentration and the main dopant detected in this sample was S originating from the crucible.
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