Abstract
Phosphidization of InGaAs is attempted using a remote phosphine plasma. Au Schottky junctions are formed on the phosphidized and Ar-plasma-treated InGaAs layers and their electrical properties are characterized. Traps are investigated by isothermal capacitance transient spectroscopy measurements. Two electron traps are detected and designated as E1 and E2. The energy levels of the E1 and E2 traps are 0.35 eV and 0.48 eV below the conduction band edge, respectively. In the case where InGaAs is treated with PH3-added Ar plasma, a significant reduction in the densities of both E1 and E2 traps occurs in comparison with those of Ar-plasma-treated InGaAs. It is found that phosphorus atoms are effective in suppressing the generation of electron traps in InGaAs.
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