Abstract
In order to clarify the structure of indium oxide film containing tin and tin oxides, various In 2O 3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In 2O 3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2×10 −4 Ω cm.
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