Characterization of InBi single crystal by etching and indentation

Abstract

Chemical etchants suitable for revealing dislocation sites in InBi have been developed. Results indicate that single crystals with a dislocation density of ≅10 4/cm 2 can be grown routinely. From the shape of indentation rosette, it was concluded that the cleaved face was (001) which agreed with the X-ray results. Microhardness of a cleaved InBi surface was found to be 5.3 kg/mm 2. Observations on the dislocation density of a typical dendrite are included.