Abstract

Amorphous SiGe alloys have been deposited in different dc glow discharges (diode, triode configuration) from SiH 4/GeH 4 mixtures with and without H 2 dilution of the neutral gas. Triode reactor and/or H 2 dilution has brought about excellent AMI photoconductivities in the range 1.7eV – 1.4eV of (2×10 −4 − 10 −5)1/ωcm. The incorporation of Ge causes only small increases in Urbach energies as well as some rise in midgap density of states (PDS and CPM). Analyses of transport behaviour from temp. dependent stationary and transient photoconduction experiments (TOF and TPC) however point towards a considerable increase in conduction band tailing and therefore a reduced effective mobility of photoexcited electrons in comparison to a-Si:H.

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