Abstract
Local order of crystalline and amorphous SiGe alloys has been studied by measurements of Ge K-edge EXAFS and Raman scattering. The analysis of the EXAFS data shows the structural disorder with deviations of bond lengths. The effects of alloying and pressure on the Raman spectra which relate to the TO phonons of SiSi, SiGe and GeGe pairs are dscussed in terms of the structural disorder and the charge transfer from Ge to Si.
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