Abstract
Highly non-(001)-oriented Pb(Zr,Ti)O3 (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO3 (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO∕Pt(111)∕Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films.
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